The reliability testing of power semiconductors is mainly used to evaluate device service life by simulating changes in product performance in long-term use or in a certain environment. The focuses are placed on device process reliability and chip performance.
· Testing current as high as 3600A, compatible with SiC MOS module tests.
· Increased to 18 channels, able to test more devices at the same time.
· Support testing of transient and steady-state thermal resistance.
· Support power cycle testing down to minutes and seconds.
· Three lab channels with independent control of channel capacity.
· Compatible with testing of IGBT, MOSFET, DIODE and other power devices of Si/SiC/GaN materials, and compatible with packaging modes such as discrete and module.
· High testing accuracy, support current auto-ranging based on the measured leakage current.
· Monitor testing temperature and data in real time, record voltage per channel/ workstation leakage current/ test chamber temperature and plot the complete curve.
· Independent high-voltage breakdown protection, protection devices connected in series at each workstation to prevent damage to the test board due to device failure.